Renesas 8th Generation IGBT : G8H Series March 10, 2016, Tokyo, Japan - Renesas Electronics Corporation (TSE: 6723), the world's leading semiconductor solutions provider, today announced the release of the eighth generation of G8H series insulation Six new products for gated bipolar transistors ( IGBTs ) that minimize conversion losses in power conditioners for solar power systems and reduce inverter applications in uninterruptible power supply (UPS) systems. The six new products are rated at 650V/40A, 50A, 75A, 1250V/25A, 40A and 75A. Renesas also implemented the industry's first TO-247plus package for 1,250V IGBTs with built-in diodes, giving system manufacturers greater flexibility in circuit configuration.
With expertise in designing low-loss IGBTs in the power converter field, Renesas Electronics optimized the eighth-generation IGBTs with a unique trench gate configuration in the process structure (Note 1). Compared to previous IGBT products, these devices have faster switching performance, which is a basic feature of IGBT performance specifications, and also reduces conduction losses (Vce (saturation), Note 2) by reducing the saturation voltage. In addition, the performance index of the eighth-generation device (Note 3) is 30% better than the previous seventh-generation IGBT, helping to reduce power consumption and improve overall performance for the user system. These updates are essential for major power industry markets that focus on photovoltaic (PV) inverters, UPS, industrial motor drives and power factor correction (PFC).
In a solar power generation system, when direct current (DC) generated by solar panels from sunlight flows through an inverter circuit to be converted into alternating current (AC), some power loss is inevitably caused. Since most of this power loss occurs in the power device used, reducing the IGBT power loss has a direct positive impact on the power generation performance of the user system. Similarly, for server room and data center UPS systems, power must continue to flow through the power converter circuitry to monitor if the power supply has been interrupted, which means stable power consumption is generated while the system is running. IGBT performance is a key factor in reducing this power consumption.
The main features of the new eighth-generation IGBT include:
4(1) Faster switching, industry-leading ultra-low power consumption, ideal for inverting circuits
Renesas has developed a unique trench gate configuration using its long-term low-loss IGBT design expertise. The new IGBTs use state-of-the-art process technology to achieve fast switching performance and low saturation voltage (VCE (saturation)) characteristics, which determine the performance of IGBT devices. Therefore, the performance index improved by 30%. In addition, Renesas analyzed the elements that reduce the power consumption of the inverter circuit and designed new devices to reduce conductance and switching losses. Therefore, the IGBT power consumption is greatly reduced, and this part of the power consumption accounts for more than half of the total power consumption of the power converter circuit.
4(2) Thanks to low switching noise, no external gate resistors need to be installed
In IGBTs, a trade-off is required between noise characteristics and switching speed. The gate noise generated by the eighth-generation IGBT during switching is greatly reduced, so that system manufacturers can remove the gate resistors previously installed to reduce noise, thereby reducing component count and enhancing design compactness.
4(3) TO-247 package with excellent heat dissipation; ensures operation at 175 ° C
The underside of the TO-247 package is made of metal, which transfers the heat generated by the IGBT's power dissipation directly to the outer surface of the package with excellent heat dissipation. The new device can withstand high temperatures of 175 ° C, which can be used in areas that are prone to warming up at high power levels, helping to improve the performance and reliability of the user's system.
4(4) The first 1250V IGBT with built-in diode in the TO-247plus discrete package type, can be used for 75A current loop rated at 100C
In previous generations, 75A current loops rated at 100C were typically incorporated into modules with large packages due to factors such as heat, noise, and operational quality. But with the low-loss and smaller chip size of the eighth-generation IGBT technology, Renesas has achieved the industry's first 1,250V IGBT with a built-in diode in a discrete TO-247plus package. By using discrete packaged devices in a 75A current band rated at 100C, system manufacturers realize the flexibility of enhanced circuit configurations with discrete devices and easily increase the system's power capacity.
Even in non-inverting circuit applications, the new eighth-generation G8H series devices can perform fast switching performance, for example, to provide excellent performance for converter boost circuits.
Pricing and availability
Samples of the eighth generation IGBT are now available. System manufacturers can choose the product that best matches the type of inverter circuit and the required output capability. The price of each product version is different. For example, the product samples for the RBN50H65T1GPQ-A0650V/50A are priced at $3.00 each. Mass production is scheduled to begin in September 2016 and is expected to reach 600,000 units by March 2017. Pricing and availability are subject to change without notice.
For the main specifications of the new 8th generation IGBT, please refer to the specification sheet (PDF: 59KB).
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