Two-dimensional material semiconductor quantum transistor research has made important progress

The Key Laboratory of Quantum Information of the Chinese Academy of Sciences, led by Academician Guo Guangcan of the University of Science and Technology of China, has recently made important progress in the research of semiconductor-gated quantum dots. Prof. Guo Guoping from the laboratory and his collaborators explored the possibility of applying two-dimensional layered transition metal chalcogenide to semiconductor quantum chips. For the first time, the quantum of all-electrical control was realized in the semiconductor flexible two-dimensional material system. Point device.

After decades of development, semiconductor-gated quantum dots as a quantum transistor have become one of the popular candidate systems for quantum chips. The two-dimensional material system represented by graphene has become a key research object of flexible electronics and quantum electronics because of its natural monoatomic layer thickness, excellent electrical properties, and easy integration. However, in the more than ten years since the discovery of graphene, scientists have tried a lot of experiments and found that the band structure and interface defect impurities in graphene have a great influence on the performance of quantum dot devices. Until now, quantum dots in two-dimensional materials have not been able to achieve effective electrical regulation.

In response to this situation, Guo Guoping's research team collaborated with researchers from Takashi Taniguchi and Kenji Watanabe of the National Institute of Materials Research and Professor Franco Nori of the Institute of Physical and Chemical Research to select a new two-dimensional material, molybdenum disulfide, for further study. The material has a suitable band gap, strong spin-orbit coupling strength and rich spin-energy-related physical phenomena, so it has a broad range in quantum electronics, especially spintronics and energy valley electronics. Application prospects.

After a lot of attempts, the research team used a series of modern semiconductor processes such as micro-nano processing and low-temperature LED irradiation to combine the boron nitride encapsulation technology widely used in the current two-dimensional material system research to effectively reduce the impurities in the quantum dot structure. For the first time, an all-electrically controllable double quantum dot structure has been realized in such materials.


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